METHOD FOR FORMING STORAGE ELECTRODE OF INNER CAPACITOR

摘要

PURPOSE: A storage electrode formation method of an inner capacitor is provided to increase a pitch size of storage electrode contact hole defined by a sacrificial layer without changing a layout. CONSTITUTION: A sacrificial layer is formed on a desired lower layer. A polysilicon hardmask is formed on the sacrificial layer. After coating a photoresist pattern on the resultant structure, the polysilicon hardmask is etched by using the photoresist pattern so as to form an undercut profile. The sacrificial layer is then etched by using the polysilicon hardmask having the undercut profile. After removing the remained polysilicon hardmask, a conductive layer for forming a storage electrode is formed on the resultant structure. Then, the sacrificial layer is removed.