发明名称 |
ACTIVE INTERNAL VOLTAGE GENERATING CIRCUIT |
摘要 |
PURPOSE: An active internal voltage generating circuit is provided to prevent overshooting of internal voltage by making gate-to-source voltage of a driving transistor maintained constantly irrespective of variation of external voltage. CONSTITUTION: A comparator(10) compares internal voltage(VINTA) with reference voltage(VREFA) in response to a control signal(PVINTAEB), and outputs a drive control signal(VINTAEB) as a comparison result. A driving transistor(20) supplies external voltage to an internal voltage output node in response to the drive control signal. A pull-down circuit(32) is connected between an output node of the comparator and ground voltage, and holds the drive control signal of a low level in response to a control signal and the internal voltage. A clamping circuit(40) is connected between the output node of the comparator and the external power supply(EVCC), and makes a level of the drive control signal follow an external power supply voltage level when the external power supply voltage is higher than a predetermined voltage.
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申请公布号 |
KR20020024914(A) |
申请公布日期 |
2002.04.03 |
申请号 |
KR20000056760 |
申请日期 |
2000.09.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, YEONG GU |
分类号 |
G11C11/4074;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/4074 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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