| 摘要 |
PURPOSE: Provided is a semiconductor device for which it is easy to blow a fuse, and to control a film thickness of an insulation film on the fuse. CONSTITUTION: A plurality of copper interconnection layers(1,2) are included a metal containing copper as a main component. A top upperlayer interconnection layer is disposed on the copper interconnection layer(2) and at least including a refractory metal film(8) connected to the copper layer. A surface-protecting film(10) is disposed on the top upperlayer interconnection layer. A barrier metal(14) for bumps is disposed on the surface protecting film(10) and connected to the top upperlayer interconnection layer. Solder balls(15) is placed on the barrier metal(14). A fuse(12), which can be cut by an energy beam, is at least formed in the top upperlayer. It is thus not necessary to etch the surface protecting film on the fuse in advance prior to blowing of the fuse, so that a range of film thickness which is proper and will not obstruct blowing of the fuse will remain. |
