发明名称 |
METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR MATRIX SUBSTRATE, AND EXPOSURE MASK |
摘要 |
PURPOSE: A patterning method and a method of forming a TFT matrix substrate are provided to form a desired preferable pattern without any reduction of the pattern at a boundary where a group of patterns formed using a plurality of exposure masks are joined. CONSTITUTION: When a third region sandwiched by a first region exposed with a first exposure mask and a second region exposed with a second exposure mask is exposed with the first and second exposure masks in a complementary manner, repetitive unit patterns for exposing the third region are different from the first patterns. |
申请公布号 |
KR20020025018(A) |
申请公布日期 |
2002.04.03 |
申请号 |
KR20010058015 |
申请日期 |
2001.09.19 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKIZAWA HIDEAKI |
分类号 |
G02F1/136;G02F1/1368;G03F1/08;G03F1/68;G03F1/70;G03F7/20;H01L21/027;H01L21/336;H01L29/786;(IPC1-7):H01L21/027 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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