发明名称 METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR MATRIX SUBSTRATE, AND EXPOSURE MASK
摘要 PURPOSE: A patterning method and a method of forming a TFT matrix substrate are provided to form a desired preferable pattern without any reduction of the pattern at a boundary where a group of patterns formed using a plurality of exposure masks are joined. CONSTITUTION: When a third region sandwiched by a first region exposed with a first exposure mask and a second region exposed with a second exposure mask is exposed with the first and second exposure masks in a complementary manner, repetitive unit patterns for exposing the third region are different from the first patterns.
申请公布号 KR20020025018(A) 申请公布日期 2002.04.03
申请号 KR20010058015 申请日期 2001.09.19
申请人 FUJITSU LIMITED 发明人 TAKIZAWA HIDEAKI
分类号 G02F1/136;G02F1/1368;G03F1/08;G03F1/68;G03F1/70;G03F7/20;H01L21/027;H01L21/336;H01L29/786;(IPC1-7):H01L21/027 主分类号 G02F1/136
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