| 摘要 |
PURPOSE: Provided are polymers suitable as the base resin in chemically amplified positive resist compositions used for micropatterning in a process for the fabrication of semiconductor devices. Also, provided are chemically amplified positive resist compositions adapted for exposure to high-energy radiation such as deep-UV, KrF excimer laser light (248 nm), ArF excimer laser light (193 nm), electron beams or x-rays and a process for forming a pattern. CONSTITUTION: The polymer having silicon-containing groups is represented by the formula(1): wherein R1 to R4 each are independently hydrogen or a straight, branched or cyclic alkyl group of 1 to 20 carbon atoms, or R1 and R2, taken together, may form an aliphatic hydrocarbon ring in which -CH2- may be substituted with a -Si(R8)2- group, and R3 and R4, taken together, may form an aliphatic hydrocarbon ring in which -CH2- may be substituted with a -Si(R8)2- group, R5 to R7 each are independently a straight, branched or cyclic alkyl or fluorinated alkyl group of 1 to 20 carbon atoms or aryl group of 6 to 20 carbon atoms and m is 1 or 2.
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