发明名称 Method for producing a suspended element in a micro-machined structure
摘要 A process for making at least one suspended element uses an etching technique for micro-machining a structure comprising a substrate covered in sequence by a first layer called a stop layer made of a first material, and a second layer made of a second material in which the suspended element is formed. The process uses a dry etching technique using a gas with sufficient selectivity to enable etching of the second layer without etching the stop layer, under conditions defined to enable anisotropic etching of the second material, the etching being carried out according to a first phase to delimit the suspended element as far as the level of the stop layer and being continued in a second phase during which the suspended element is released by etching of the surface layer of the suspended element delimited in the first phase and which is adjacent to the stop layer.
申请公布号 US6365056(B1) 申请公布日期 2002.04.02
申请号 US19990331255 申请日期 1999.07.27
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 ROBERT PHILIPPE;MICHEL FRANCE;GRANGE HUBERT
分类号 G01P9/00;B81C1/00;G01L9/00;G01P15/02;H01L29/84;(IPC1-7):H01L21/302 主分类号 G01P9/00
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