发明名称 INSULATING SUBSTRATE FOR THIN-FILM POLYCRYSTAL SILICON SOLAR BATTERY, AND METHOD FOR PRODUCING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide an insulating substrate for a thin-film polycrystal silicon solar battery, capable of improving the efficiency of photoelectric exchange by forming a texture structure on the surface of a silicone-based resin layer, and having excellent flexibility and heat resistance. SOLUTION: This insulating substrate for the thin-film polycrystal silicon solar battery is obtained by forming the silicone-based resin layer obtained by compounding 5-30 wt.% inorganic filler having 3-300 nm average particle diameter with a silicone-based resin obtained by adding an alkyl group, an alkenyl group, a phenyl group or the like as a side chain to a main skeleton consisting of Si-O-Si bond, on the surface of a metal substrate, and has the surface roughness of the silicone-based resin layer regulated so that the Rmax may be 0.3-1.5μm. Silica, titanium oxide, alumina or the like is used as the inorganic filler.</p>
申请公布号 JP2002097365(A) 申请公布日期 2002.04.02
申请号 JP20000289879 申请日期 2000.09.25
申请人 NISSHIN STEEL CO LTD 发明人 ANAMI KATSUMASA;MAKINO TOMONORI;KAJIMOTO ATSUSHI
分类号 C08L83/04;C08K3/00;C23C16/02;C23C16/24;H01L31/04;(IPC1-7):C08L83/04 主分类号 C08L83/04
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