| 发明名称 |
Method for forming cross-linking photoresist and structures formed thereby |
| 摘要 |
A method for forming a cross-linking photoresist layer is provided. The method includes steps of providing a photoresist layer; activating the photoresist layer with a light provided by a light source; and putting the photoresist layer in a vapor of a cross-linking agent to form the cross-linking photoresist layer.
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| 申请公布号 |
US6365263(B1) |
申请公布日期 |
2002.04.02 |
| 申请号 |
US19990433664 |
申请日期 |
1999.11.04 |
| 申请人 |
WINBOND ELECTRONICS CORP. |
发明人 |
CHANG WEN-PIN |
| 分类号 |
B32B3/02;G03F7/038;G03F7/40;(IPC1-7):G03C1/73;B32B27/32;B32B3/00;G03F7/004 |
主分类号 |
B32B3/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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