| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a high quality nanocrystal doped with manganese. SOLUTION: This method has generally the following processes: (a) a process where a manganese organometallic precursor is mixed with a group II organometallic precursor and a group VI organometallic precursor to supply a mixture of precursors; (b) a process where the mixture of precursors is diluted by a dilution solvent to supply a injection mixture; (c) a process where a coordination solvent is heated; (d) a process where the heated coordination solvent is stirred; and (e) a process where the injection mixture is injected into the heated coordination solvent being stirred. This method is useful especially for producing a high quality zinc selenide(ZnSe) nanocrystal doped with manganese, a high quality zinc sulfide(ZnS) nanocrystal doped with manganese, and a high quality zinc telluride(ZnTe) nanocrystal doped with manganese. |
