| 摘要 |
PROBLEM TO BE SOLVED: To prevent corrosion on a cathode electrode or a seed film in before and after plating. SOLUTION: This method for manufacturing a semiconductor device, in which fixes a wafer with face-down to a cup-like plating tank is fixed, and a voltage between a cathode electrode which contacts with and conducts electric current to a wafer and an anode electrode in the plating tank to plate the wafer is applied while a plating liquid flows in the plating tank along the wafer surface, is characterized in applying a lower waiting voltage than that at a plating time between the cathode electrode and the anode electrode while the wafer or the cathode electrode contacts with the plating liquid to wait. By applying this waiting voltage, the corrosion on the cathode electrode or the seed film can be prevented. Thereby, uniformity of a plated film does not decrease and yields are improved.
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