| 摘要 |
In this semiconductor device, immediate below a mold line M in a surface where an inner lead of a wiring substrate composed of a BT resin impregnated glass cloth or the like is formed, a second solder resist layer is stacked on a first solder resist layer to form a protrusion of a predetermined width. Then, on a predetermined position of the wiring substrate, a semiconductor element is assembled by wire bonding and an assembled part thereof is molded by a resin layer. Further, on the other surface of the wiring substrate, bumps are formed. Such a semiconductor device is separated by use of a slit hole formed on the wiring substrate in advance in conformity with a mold line M. In this structure, in a step of molding, since a resin is not forced outside of a pushing face of a metal mold to form a burr or the like, a thin and small resin molded semiconductor device of excellent appearance and characteristic can be obtained. Further, due to separation by use of a slit hole, a separating operation in the final step becomes easy, in addition, since a separating margin is hardly required, a CPS or the like can be made further smaller.
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