发明名称 Method of manufacturing a photovoltaic device
摘要 This invention manufactures a photovoltaic device by the following process steps: a step to form a first electrode layer and a light-active semiconductor layer on an insulating surface of the substrate; a step to form a transparent conducting film over most of the insulating surface including the light-active semiconductor layer; a step to establish a patterned transparent protective layer on the transparent conducting film over power generating regions; and a step to irradiate ultraviolet laser light over most of the substrate to remove exposed portions of the transparent conducting film not masked by the pattered transparent protective layer and form a transparent conducting layer corresponding to the pattered transparent protective layer. The patterned transparent protective layer serves a dual purpose as masking material for removing the specified areas of the transparent conducting film by ultraviolet laser and as a transparent protective layer. Accordingly, material that is passed by visible light but not passed by ultraviolet light is used as the patterned transparent protective layer.
申请公布号 US6365431(B1) 申请公布日期 2002.04.02
申请号 US20000722736 申请日期 2000.11.28
申请人 SANYO ELECTRIC CO., LTD. 发明人 HANEHIRA NOBUO;WAKAMIYA YOSHINORI;SHUTO HIDEKAZU;MORI HIROYUKI;ONO MASAYOSHI;SHINOHARA WATARU;YAMAMOTO YASUAKI
分类号 H01L31/04;H01L21/00;H01L31/0216;H01L31/0224;H01L31/18;(IPC1-7):H01L21/00 主分类号 H01L31/04
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