发明名称 |
Method of manufacturing a photovoltaic device |
摘要 |
This invention manufactures a photovoltaic device by the following process steps: a step to form a first electrode layer and a light-active semiconductor layer on an insulating surface of the substrate; a step to form a transparent conducting film over most of the insulating surface including the light-active semiconductor layer; a step to establish a patterned transparent protective layer on the transparent conducting film over power generating regions; and a step to irradiate ultraviolet laser light over most of the substrate to remove exposed portions of the transparent conducting film not masked by the pattered transparent protective layer and form a transparent conducting layer corresponding to the pattered transparent protective layer. The patterned transparent protective layer serves a dual purpose as masking material for removing the specified areas of the transparent conducting film by ultraviolet laser and as a transparent protective layer. Accordingly, material that is passed by visible light but not passed by ultraviolet light is used as the patterned transparent protective layer.
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申请公布号 |
US6365431(B1) |
申请公布日期 |
2002.04.02 |
申请号 |
US20000722736 |
申请日期 |
2000.11.28 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
HANEHIRA NOBUO;WAKAMIYA YOSHINORI;SHUTO HIDEKAZU;MORI HIROYUKI;ONO MASAYOSHI;SHINOHARA WATARU;YAMAMOTO YASUAKI |
分类号 |
H01L31/04;H01L21/00;H01L31/0216;H01L31/0224;H01L31/18;(IPC1-7):H01L21/00 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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