| 摘要 |
PROBLEM TO BE SOLVED: To prevent a transistor from varying in characteristics when it is subjected to an oxygen annealing process, by a method wherein an active device such as a transistor is formed on a semiconductor substrate, and an insulating film whose main component is SiN is formed between the active device and a capacitor formed of ferroelectric material. SOLUTION: Element isolation insulating films 102 are formed on a P-type Si substrate 101, and an N-type diffusion layer 103 to serve as a source and an N-type diffusion layer 104 to serve as a drain are formed between the insulating films 102. Gate electrodes 105 and 108 are formed on the N-type diffusion layers 103 and 104, and an interlayer insulating film 106 is formed on the gate electrodes 105 and 108 to form an active device such as a transistor. An insulating film 113 whose main component is SiN is formed between the active device such as a transistor and a capacitor formed of a ferroelectric film 109. By this setup, a transistor or the like can be prevented from varying in characteristics when it is subjected to oxygen annealing. |
