发明名称 Semiconductor laser with kink suppression layer
摘要 A kink suppression technique is disclosed in which optical characteristics of a distributed feedback laser diode's resonant cavity are controlled to preferentially prevent establishment of higher order lateral modes. This results in increased kink powers and thus the useful power range of the device. Specifically, an optical layer, preferably silicon or titanium, is disposed along the optical axis, on the etched upper cladding layer, and on both sides of the ridge.
申请公布号 US6366595(B1) 申请公布日期 2002.04.02
申请号 US20000597597 申请日期 2000.06.20
申请人 CORNING LASERTRON, INC. 发明人 BOWLER DENNIS P.
分类号 H01S5/20;H01S5/22;H01S5/223;(IPC1-7):H01S3/085 主分类号 H01S5/20
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