发明名称 |
Method of forming gate oxide layer in semiconductor device |
摘要 |
A method of forming a gate oxide layer in a s conductor device which can obtain low leakage current and high reliability with obtaining effective thickness of 40 Å or lees, is disclosed.According to the present invention, a NO-oxynitride layer as the bottom oxide layer is formed on a semiconductor substrate and a tantalum oxide layer as the medium oxide layer is thereon. The oxide layer is then formed on the tantalum oxide layer and the substrate is thermal-treated under N2O gas atmosphere.
|
申请公布号 |
US6365467(B1) |
申请公布日期 |
2002.04.02 |
申请号 |
US19990436780 |
申请日期 |
1999.11.08 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
JOO MOON SIG |
分类号 |
H01L29/78;H01L21/28;H01L21/314;H01L21/316;H01L21/318;H01L29/51;(IPC1-7):H01L21/823;H01L21/320;H01L21/336;H01L21/476 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|