| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming composition and an insulation film-forming material capable of forming a silicious film having small specific dielectric constant, excellent crack resistance, mechanical strength and adhering ability for use as an interlayer insulation material in a semiconductor element or the like. SOLUTION: This silicone polymer is obtained by reacting (A) carbon tetrahalide, (B) silicon tetrahalide and (C) at least one compound selected from the group consisting of a compound expressed by formula (1), a compound expressed by formula (2) and a compound expressed by formula (3) in the existence of either metallic Li or metallic Mg: R10nSiX4-n (1), R10nCX4-n (2), R10MgX (3) (where R10 represents one valence organic group, X represents a halogen atom, and n is an integer of 1 to 3).
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