发明名称 |
Method of processing a substrate in a processing chamber |
摘要 |
Methods for processing a substrate are disclosed. In one embodiment of the invention, a substrate with a first layer and an oxide layer on the substrate is placed in a processing chamber. The oxide layer is removed while the substrate is at a first temperature in the processing chamber. A second layer is then formed on the first layer while the substrate is at a second temperature in the processing chamber.
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申请公布号 |
US6365518(B1) |
申请公布日期 |
2002.04.02 |
申请号 |
US20010818361 |
申请日期 |
2001.03.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LEE ALBERT;NGAI CHRIS;BENCHER CHRISTOPHER;NOWAK TOM |
分类号 |
H01L21/3213;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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