发明名称 CVD-SILICON CARBIDE FILM COATED MEMBER AND METHOD FOR PRODUCING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a chemical vapor deposition(CVD)-SiC film which is not peeled from a substrate and is produced at a low cost, and provide a method for producing the same. SOLUTION: In this producing method, a CVD-SiC film-coated member has a SiC-Si impregnated substrate 2 and a SiC film 5 which is formed on the substrate 2 at a temperature higher than the melting point of silicon by using a CVD process. The SiC film adheres securely to SiC particles 6 in the SiC-Si impregnated substrate 2, but does not adhere to the silicon 3 with which the substrate is impregnated.
申请公布号 JP2002097091(A) 申请公布日期 2002.04.02
申请号 JP20000289363 申请日期 2000.09.22
申请人 TOSHIBA CERAMICS CO LTD 发明人 FUJISAWA HIROYUKI
分类号 C04B41/87;C04B41/88;C23C16/42;H01L21/205;(IPC1-7):C04B41/87 主分类号 C04B41/87
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