| 摘要 |
A synchronous flash memory includes an array of non-volatile memory cells. The memory device has a package configuration that is compatible with an SDRAM. The memory device can detect a brown-out of a supply voltage. The memory device comprises a voltage detection circuit to monitor a supply voltage and provide a signal if the supply voltage drops below a predetermined value. A latch is coupled to the voltage detection circuit and can be programmed to indicate if the supply voltage dropped below the predetermined value. An external controller can read a status of the latch. The memory, therefore, can provide an indication to an external controller that a reset, or initialization, operation is needed.
|
