| 摘要 |
A superconductive tunnel junction device in which quasiparticles in a superconductive region (S1), relax into a normal metal trap (N1) releasing their potential energy in electron-electron interactions to increase the number of excited charge carriers in the trap. The excited charge carriers tunnel through an insulating tunnel junction barrier (I2) into a second superconductive region (S2). The quasiparticles in the first superconductive region are formed either by absorption or energetic particles/radiation or by injection by charge carriers tunneling in from a base region which can be of normal metal (N0) or superconductor (or both) of semiconductor. The current from the trap to the second superconductor is higher than that out of the base region thus providing current amplification. The device can thus form a three terminal transistor-like device. It can be used as or in particle/radiation detectors, as an analogue signal amplifier, microrefrigerator or digital switch.
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