| 摘要 |
An electronic memory device (1) having electrically programmable memory cells, an address bus (30) for addressing the memory cells, and also a controllable programming voltage pump (22) for producing a programming voltage for the memory cells. The electronic memory device is distinguished by a switching device (23) which can be actuated by a test mode signal and which can be used to connect the address bus (30) to the programming voltage pump (22) in a test mode such that a prescribable test programming voltage can be set using supplied address bits. |
