| 摘要 |
The present invention relates to plasma-enhanced chemical vapor deposition (PECVD) and related chamber hardware. Embodiments of the present invention include a PECVD system for depositing a film of titanium nitride from a TDMAT precursor. The present invention broadly provides a chamber, a gas delivery assembly, a pedestal which supports a substrate, and a plasma system to process substrates. In general, the invention includes a chamber body and a gas delivery assembly disposed thereon to define a chamber cavity. A pedestal movably disposed within the chamber cavity is adapted to support a substrate during processing. The gas delivery assembly is supported by the chamber body and includes a temperature control plate and a showerhead mounted thereto. Preferably, the interface between the showerhead and temperature control plate is parallel to a radial direction of the gas delivery assembly to accommodate lateral thermal expansion without separation of the showerhead and the temperature control plate. A blocker plate, or baffle plate, may be disposed between the showerhead and temperature control plate to facilitate dispersion of gases delivered thereto.
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