METHOD FOR FABRICATING PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a pattern of a semiconductor device is provided to reduce an interference effect caused by light by using a spacer as an etch mask, and to form a pattern having a uniform critical dimension(CD) by preventing erosion of the etch mask. CONSTITUTION: The first etch mask pattern is formed on a pattern layer. A portion of the exposed pattern layer is etched to form a recess region by using the first etch mask pattern as an etch mask. The first etch mask pattern is eliminated. The second etch mask pattern(210) of a spacer type is formed only on the sidewall of the recess region of the pattern layer. The exposed pattern layer is etched to form a pattern layer pattern by using the second etch mask pattern as an etch mask.