SILICON WAFER FOR STACKING EPITAXIAL LAYER, EPITAXIAL WAFER AND FABRICATING METHOD THEREOF

摘要

PURPOSE: An epitaxial wafer is provided to prevent generation of a crystal originated particle(COP) or interstitial-type large dislocation loop(I/D) on an epitaxial layer when a thin film epitaxial layer is formed, by using a silicon wafer as a substrate for stacking the epitaxial layer such that COP or I/D is rarely generated in the surface of the silicon wafer. CONSTITUTION: A heat treatment process is performed in an oxygen atmosphere for 2-5 hours and within a temperature scope of 1000 plus or minus 30 deg.C. A heat treatment process is performed for 1-16 hours and within a temperature scope of 1130 plus or minus 30 deg.C. The epitaxial wafer includes the silicon wafer having no oxidation induced stacking fault(OSF) and the epitaxial layer of silicon monocrystal having a thickness of 0.2-5 micrometer formed on the silicon wafer. The epitaxial wafer don't have any particle caused by crystallization of the entire surface of the epitaxial layer.