| 摘要 |
PROBLEM TO BE SOLVED: To lessen a change in the temperature of the peripheral parts of substrates during a continuous treatment of the substrates in the manufacturing method of a semiconductor device. SOLUTION: The manufacturing device of a semiconductor device is constituted in a structure that a silicon wafer 10 placed on a susceptor 9 is made to rise to a substrate treating position, raw gas and oxygen-containing gas are fed to the upper part of the wafer 10 via a shower head 3 to deposit a ruthenium film or a ruthenium oxide film on the wafer 10, the treated silicon wafer 10 is lowered to a substrate transfer position, the wafer 10 is taken to the outside of the manufacturing device, a new silicon wafer 10 is placed on the susceptor 9, in the same manner hereinafter, a ruthenium film or a ruthenium oxide film is deposited on the wafer 10 and after a continuous treatment of such silicon wafers 10 is performed. A heater unit 13 is held at the region between the substrate treating position and the substrate transfer position in a state that the wafer 10 is not placed on the susceptor 9, power is fed to a heater 7 to wait until the temperature environment within the manufacturing device is settled stably and a continuous treatment of silicon wafers 10 is again performed.
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