| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with which residual film thickness of an interlayer insulating film on a thin-film resistor can be controlled accurately. SOLUTION: After a field oxide film 3 is formed on the surface of a silicon wafer 1, a thin-film resistor 5 and dummy patterns 6 are formed ((a-1), (b-1)), and further a BPSG/NSG film 7, plasma CVD film 9, PSG film 15, organic SOG film 11, plasma CVD film 13, PSG film 15, and silicon nitride film 17 are formed thereon ((a-2), (b-2)). By forming the dummy patterns 6 in the peripheries of the thin-film resistor 5, film thickness 31 of the interlayer insulating film on the thin-film resistor 5 is made to be identical with film thickness 25 of the interlayer insulating film in an opening-forming region for film-thickness monitoring. A trimming-window opening 19 and an opening 21 for film-thickness monitoring are formed simultaneously through dry etching ((a-3), (b-3)). The residual film thickness 33 of the interlayer insulating film on the thin-film resistor 5 is identical with the residual film thickness 35 of the interlayer insulating film in the opening 21 for film-thickness monitoring.
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