| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which a faulty memory cell can be specified and relieved when a standby current failure occurs due to small leakage. SOLUTION: A power source potential GNDP for applying a substrate potential to N-channel MOS transistors 74, 78 composing memory cells of SRAM is made controllable independently of the ground potential GNDM for giving a source potential. When a faulty standby current occurs, it is possible to detect the failure in a function test by weakening the driving capability of the N- channel MOS transistors 74, 78 by a substrate effect. Therefore, the faulty memory cell can be specified, and a yield can be improved by replacing the cell by a redundant memory cell. |
