| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN based light emitting diode in which a p-type ohmic contact electrode having an appropriate resistance is formed between a metal and a semiconductor material in order to prevent the performance of a light emitting diode having a large band gap from being limited. SOLUTION: A low resistance p-type ohmic contact electrode is formed by forming a semiconductor deposition layer, i.e., a multidigital GaN/GaP layer, on a p-type GaN based III-V compound semiconductor and growing a contact layer of p-type GaN further thereon, or a p-type ohmic contact electrode coming into good contact with such a metal as AuBe or AuZn is formed by growing a buffer layer of linear gradual composition of p-type Ga (n, p) and growing p-type GaP thereon or growing a p-type GaP contact layer directly. |
