| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting element exhibiting an excellent luminous efficiency of UV-rays. SOLUTION: A transparent layer 20, an N type layer 14, a P type layer 16, and a P type ohmic layer 22 are formed sequentially on a sapphire substrate 10 thus forming a PN junction light emitting element. The transparent layer 20 is formed by depositing AlGaN and GaN periodically and the effective gap thereof is set wider than the band gap of an emission layer comprising the N type layer 14 and the P type layer 16. Since the transparent layer 20 becomes transparent for UV-rays, absorption of UV-rays is suppressed. Furthermore, crystallinity of the N type layer 14 and the P type layer 16 formed on the transparent layer 20 can be prevented from lowering because the surface of the transparent layer 20 is flat and generation of light on the long wavelength side can be suppressed. Consequently, luminous efficiency of the light emitting element can be enhanced. |
