| 摘要 |
PROBLEM TO BE SOLVED: To provide an ultraviolet transparent conducive film capable of enough transmitting blue light near 400 nm and ultraviolet rays of shorter wavelength, and useful as a transparent electrode for ultraviolet emitting device, a transparent electrode for ultraviolet sunlight power generation, a transparent electrode for biological material analysis, and an anti-static film for ultraviolet laser machining. SOLUTION: This ultraviolet transparent conductive film is characterized in that it is formed of Ga2O3 crystal, it is transparent in the range of wavelength from 240 nm to 800 nm, or wavelength from 240 nm to 400 nm, and electric conductivity is provided by oxygen defect or dopant element. At least one of Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W is taken as dopant. The above film is manufactured at base plate temperature of 600 to 1500 deg.C, the oxygen partial pressure of 0 to 1 Pa, and one method selected from a pulse laser evaporation method, a sputtering method, a CVD method and an MBE method. |
