发明名称 SMALL POWER SUPPLY, ITS MANUFACTURING METHOD AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE MOUNTING SMALL POWER SUPPLY
摘要 <p>PROBLEM TO BE SOLVED: To prevent immediate interruption of power supply even if incident light to the light receiving type power supply for semiconductor integrated circuit is intercepted and to supply power even if incident light is not present. SOLUTION: A p-type region 11 is provided at the upper part of a semiconductor substrate 10 of n-type silicon. An insulating film 12 of silicon oxide having thickness of about 1μm is formed on the semiconductor substrate 10 and a p-side electrode 13 of aluminum is formed on the insulating film 12 through an opening for exposing the p-type region 11. A passivation film 14 of silicon nitride having thickness of about 1μm is formed on the insulating film 12 and the p-side electrode 13 and a light emitting layer 15 emitting light having emission wavelength shorter than the wavelength corresponding to the energy gap of silicon constituting the semiconductor substrate 10 and containing a fluorescent material having luminous properties is formed on the passivation film 14.</p>
申请公布号 JP2002094105(A) 申请公布日期 2002.03.29
申请号 JP20000279919 申请日期 2000.09.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UEDA DAISUKE;KATAYAMA TAKUMA;TAMAI SEIICHIRO
分类号 C09K11/64;H01L31/052;(IPC1-7):H01L31/052 主分类号 C09K11/64
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