| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a minute electrode that will not be affected by the number of connection between chips and has high dimensional accuracy, and the manufacturing method of a semiconductor device that has the electrode. SOLUTION: This manufacturing method includes a process that forms an insulating film 11 on the wiring pattern of a semiconductor chip, a process that forms a mask layer 12 having an opening at a position where the electrode is formed on the insulating film 11, a process that eliminates the insulating film in the opening with the mask layer 12 as a mask for exposing a portion of the wiring pattern, a process that forms a conductor layer over the entire surface, a process that eliminates the conductor layer formed on the mask layer 12, while leaving a conductor layer 14a on the wiring pattern, and a process that eliminates the mask layer 12. |
