| 摘要 |
PROBLEM TO BE SOLVED: To provide a power MOSFET for an amplifier device which is satisfactory in output power characteristics and high-frequency characteristics. SOLUTION: Related to the power MOSFET, a shield conductive film 10 of the same electric potential as a source is provided at the upper part of an n-type semiconductor region (drain/offset layer) 8. The shield conductive film 10 and other electrode wirings are arranged in the following order; a drain electrode 15, the shield conductive film 10, a gate electrode 3, a source electrode 13, and a gate-shorting wiring 14. The shield conductive film 10 is formed thinner than the gate electrode 3.
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