| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor device, with which deterioration in uniformity of the film thickness due to the disorder of temperature distribution in a diffusion furnace is prevented. SOLUTION: With respect to the method for forming an insulation film in the course of manufacturing semiconductor devices by subjecting a silicon oxide film formed on a silicon base in an oxidizing atmosphere containing nitrogen to oxynitriding, the oxynitriding process is divided into first and second steps of oxynitriding. When the flow rate of the introducing gas in the first oxynitriding process step is X and the flow rate of the introducing gas in the second oxynitriding process step is Y, a relational expression Y>X can be established.
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