| 摘要 |
PROBLEM TO BE SOLVED: To form a silicon nitride film exhibiting a proper crystal structure. SOLUTION: A silicon wafer is placed on a previously heated ceramic heater 5 by a wafer transfer device and is heated up to 350-500 deg.C, while the pressure in a reaction vessel 1 is set to 20 Pa or lower and a material gas, which is a mixture of SiH4 gas and NH3 gas containing the silicon material at a ratio of 1/5 to 1/2, is supplied to a shower head 3 via a supply tube 4. A silicon nitride film is formed on the silicon wafer, by supplying high-frequency power supply 7 to an electrode 6 for discharge by a high-frequency power source 7 and producing plasma in the reaction vessel 1.
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