| 摘要 |
PROBLEM TO BE SOLVED: To provide a refreshing method of a semiconductor device such as a VSRAM. SOLUTION: In a semiconductor device 1, a memory cell array 20 is divided into four blocks, that is, a block (0) 22A, a block (1) 22B, a block (2) 22C, and a block (3) 22D. In some block 22, refreshing is performed in all residual other blocks 22 while readout or write-in of data is performed. Also, as time difference is provided mutually, refreshing for each of plural blocks 22 in a standby state or an operation state can reduce peak current.
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