| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the need for removing a silicide layer, even if a metal film, capable of forming silicide, is formed at manufacturing of a thin film transistor. SOLUTION: By performing surface oxidization processing by ultraviolet-ray irradiation or the like to the entire upper surface of an ohmic contact layer 16 composed of n-type amorphous silicon, an oxidized film 17 is formed thin. Then, the metal film 18, capable of forming silicide and composed of chrome or the like, is formed on the entire upper surface of the oxidized film 17. In this case, since the oxidized film 17 is formed over the entire upper surface of the ohmic contact layer 16, the silicide layer will not be formed between the metal film 18 and the ohmic contact layer 16. Thus, the need for removing the silicide layer is eliminated.
|
