SEMICONDUCTOR MEMORY AND SENSE AMPLIFIER CONTROL METHOD THEREFOR, AND BIT LINE FAILURE DETECTION METHOD

摘要

PROBLEM TO BE SOLVED: To accurately detect a bit line bridging failure, and also improve a failure detection rate. SOLUTION: In a test mode, 1st- and 2nd sense amplifier control signals PSE-01, PSE-E are enabled at different points of time, and the 1st sense amplifier 320 for detecting and amplifying the potentials of an odd-numbered bit line pair and the 2nd sense amplifier 330 for detecting and amplifying an even- numbered bit line pair are activated at different points of time. Namely, in the test mode, the odd-numbered bit line pair BL1, BL1B and the even-numbered bit line pair BL2, BL2B are made to differ in sensing point of time. In the test mode, when the odd-numbered sensing pair have been sufficiently sensed, the sensing of the even-numbered bit line pair BL2, BL2B are performed.