| 摘要 |
PROBLEM TO BE SOLVED: To prevent surface oxidation, when using Cr or a Cr alloy as the gate electrode of the thin-film transistor(TFT) of a top gate structure, and to reduce the contact resistance between the gate and the source. SOLUTION: In the thin-film transistor of the top gate structure, Cr or the Cr alloy is used as a gate metal. With the Cr alloy, manufacturing can be performed at a high process temperature, however, Cr is easily oxidized and it becomes Cr oxide in a resist ashing process and cannot be used as an electrode. By attaining the laminated structure of Cr and Al, at gate electrode formation and etching Al after ashing, the oxidation of the surface of Cr at ashing is prevented, and it can also withstand annealing at a high temperature thereafter.
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