| 摘要 |
PROBLEM TO BE SOLVED: To simplify the manufacturing process of a semiconductor device which is provided with a Zener diode, together with a semiconductor element for semiconductor power. SOLUTION: After an n+-type region 16b of a gate electrode 11 and a Poly-Si layer 16 is formed, thermal oxidation is carried out and an oxidized film 12 is formed. Thus, the oxidized film 12 is acceleratedly oxidized on the surface of an area where n-type impurities are injected and the oxidized film 12 becomes thicker than other regions on the surface of an n+-type source region 9, the gate electrode 11 and the n+-type region 16. Thereafter, p-type impurities are ion-implanted with the oxidized film 12 as a mask, a p+-type contact region 8 is formed on the surface layer part of a p-type channel region 6, and a p+-type region 16a is formed on the Poly-Si layer 16. Thus, the need for the mask to form the p+-type contact region 8 and the p+-type region 16a is eliminated, and the manufacturing process of the semiconductor device is simplified.
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