发明名称 PHOTO-SEMICONDUCTOR ELECTRODE AND PHOTOELECTRIC TRANSFER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a photo-semiconductor electrode and a photoelectric transfer device capable of efficiently utilizing the light (e.g. sunlight), having excellent photoelectric transfer efficiency, stability, and durability or the like, and being easily manufactured. SOLUTION: The photo-semiconductor electrode and the photoelectric transfer device have a layer carrying at least a compound expressed by the general formula I on the surface of a metal oxide semiconductor.
申请公布号 JP2002093474(A) 申请公布日期 2002.03.29
申请号 JP20000283236 申请日期 2000.09.19
申请人 FUJI XEROX CO LTD 发明人 TAHO FUMIAKI;IMAI AKIRA;YAMAGUCHI YASUHIRO;INAMI KAZUKI
分类号 C07D239/24;C07D213/79;H01L31/04;H01M14/00 主分类号 C07D239/24
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