| 发明名称 |
MATERIAL FOR FORMING HAFNIUM-BASED OXIDE FILM |
| 摘要 |
PROBLEM TO BE SOLVED: To efficiently provide a technique for forming a neat hafnium-based film. SOLUTION: A compound which is expressed by a chemical formula (R1R2N)4 Hf is used.
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| 申请公布号 |
JP2002093804(A) |
申请公布日期 |
2002.03.29 |
| 申请号 |
JP20000282198 |
申请日期 |
2000.09.18 |
| 申请人 |
TRI CHEMICAL LABORATORY INC |
发明人 |
MACHIDA HIDEAKI;HOSHINO ASAKO |
| 分类号 |
C23C16/40;H01L21/316;H01L29/78;(IPC1-7):H01L21/316 |
主分类号 |
C23C16/40 |
| 代理机构 |
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