| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of treating a surface, to achieve a desired longitudinal structure in a desired region on a Si or SiGe wafer. SOLUTION: This method of treating a surface comprises the steps of forming a mask containing at least one kind selected from among a group consisting of a diamond layer, SiC layer, Si1-yCy (0<y<1) layer, Si1-xGexC (0<x<1) layer and Si1-x-yGexCy (0<x+y<1, x≠0, y≠0) layer on a wafer made of Si or Si1-xGex (0<x<1) and removing the exposed portion of the wafer by having the wafer on which the mask is formed irradiated with an etching gas containing atomic hydrogen.
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