SEMICONDUCTOR SUBSTRATE WITH LOW-PERMITTIVITY SILICA FILM, AND METHOD FOR FORMING THE LOW-PERMITTIVITY SILICA FILM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate, having a low-permittivity silica film which has superior characteristics of low relative permittivity of 3 or less, low-moisture absorbability and high film strength, without giving damages to meta wirings arranged on the substrate. SOLUTION: The semiconductor substrate having the low-permittivity silica film comprises a silicon substrate, a multilayer interconnection layer on the substrate and a low permittivity silica film. In this case, the low-permittivity silica film is provided on the silicon substrate, between the inner connection layers of the multilayer interconnection structure, an element surface and/or a P-N junction section. The low permittivity silica film has a shell layer and a cavity, filled with a gas therein or inorganic compound particles becoming porous and made of a gas and a porous substance.