| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which suppresses the fluctuation of its oscillation wavelength, can be driven in a high-output state, and can operate highly reliably for a long period. SOLUTION: An active layer 103 is composed at least of a window region 113 adjoining to one end face of the layer 103, and an internal region 114 having a multiple quantum well structure. The window region 113 is formed by performing heat treatment (RTA) after the region is irradiated with ionized atoms from an upper clad layer side. In addition, the photoluminescence from the window region 113 is adjusted so that its peak wavelengthλw may meet the relation ofλw<=λi-5 nm with respect to the peak wavelengthλi of the photoluminescence from the internal region 114, and its half-value width may become narrower than that of the photoluminescence from the internal region 114.
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