| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a structure which is effective for suppressing a short channel effect. SOLUTION: With an Si substrate 11 prepared, there are formed an element separating insulating film 12 enclosing an N-type active region, a dummy gate insulating film 15, a first dummy gate electrode 16 and the like. An extension region 17 is formed, where P-type impurity ions is vertically implanted into the Si substrate 12, and a first pocket region 18 is formed, where N-type impurity ions is implanted. A source/drain region 21 is formed by implanting P-type impurity ions into the Si substrate 11. With an inter-layer insulating film 22 formed on the substrate, the first dummy gate electrode 16 is selectively removed, to form a recessed part at the inter-layer insulating film 22. In the recessed part, a dummy side spacer 24 and a second dummy gate electrode 26 are formed. A gap is formed between the inter-layer insulating film 22 and the second dummy gate electrode 26, by selectively removing the dummy side spacer 24, and then by implanting N-type impurity ions into the Si substrate 12 through the gap almost vertically, a second pocket region 27 is formed.
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