THIN-FILM CRYSTAL WAFER HAVING P-N JUNCTION, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce initial fluctuation rate of a collector current in an HBT, where carbon is introduced to a base layer for increasing the concentration of carriers. SOLUTION: Dehydrogenation annealing treatment is conducted on the base layer, where carbon is introduced as a dopant at an annealing temperature of 550 to 700 deg.C, and the concentration of a hydrogen atom is set at 5×1018 cm-3 or lower.