发明名称 SIMULATION METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a precision simulation method where the degradation in precision caused by time division in simulation is suppressed, requiring no estimation of the total capacity of a floating gate. SOLUTION: At the interface between an electric floating region 3 and an insulating region 2, the relational expression of an electric potential gradient is embedded in the Poisson equation based on the current density in the electric floating region 3, displacement current density, and current continuous expression of the current density by hot carrier. The electric potential of the electrically flowing region 3 is automatically updated, when the Poisson equation is solved.
申请公布号 JP2002094044(A) 申请公布日期 2002.03.29
申请号 JP20000281831 申请日期 2000.09.18
申请人 TOSHIBA CORP 发明人 MATSUZAWA KAZUYA;ISHIHARA TAKAMITSU
分类号 G06F17/50;H01L21/8247;H01L27/115;H01L29/00;H01L29/788;H01L29/792;(IPC1-7):H01L29/00;H01L21/824 主分类号 G06F17/50
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