| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a magneto-resistance effect type element for realizing an excellent tunnel junction by using a perovskite oxide and generating a large magneto-resistance effect even in a low magnetic field. SOLUTION: This magneto-resistance effect type element is provided with a layered perovskite oxide provided with a composition expressed by a formula L2(A1-zRz)2An-1MnO3n+3+x and provided with an (L-O)2 layer within a crystal structure and a pair of ferromagnetic bodies formed so as to clamp the oxide in contact with it. At least one kind of elements selected from Ca, Sr and Ba is denoted by A, at least one kind of the elements selected from Bi, Tl and Pb is denoted by L, at least one kind of the elements selected from Ti, V, Cu, Ru, Ni, Mn, Co, Fe and Cr is denoted by M, and a rare earth element is denoted by R, respectively. 1, 2 or 3 is denoted by (n) and numerical values within a range indicated by -1<=x<=1 and 0<=z<1 are respectively denoted by (x) and (z).</p> |
