发明名称 SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser device which does not come off after the laser is mounted even when the element is mounted in a junction-down form, and to provide a method of manufacturing the device. SOLUTION: The semiconductor laser device is provided with a laminated structure composed at least of a lower clad layer, an active region, and an upper clad layer on a semiconductor substrate. The laminated structure has a mesa stripe section formed throughout the structure, from the top of the structure to the middle of the lower clad layer, or from the top of the structure to the middle of the upper clad layer, and current blocking layers having current blocking functions on both sides of the mesa stripe section. The laminated structure also has an insulator film in the part other than the part immediately above the mesa stripe section, a cap layer covering the mesa stripe section and insulator film, and a metallic electrode formed on the cap layer. Therefore, the semiconductor laser does not come off after the laser is mounted.
申请公布号 JP2002094184(A) 申请公布日期 2002.03.29
申请号 JP20000280087 申请日期 2000.09.14
申请人 SHARP CORP 发明人 HIRUKAWA SHUICHI;OBAYASHI TAKESHI
分类号 H01S5/227;H01S5/042;(IPC1-7):H01S5/227 主分类号 H01S5/227
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